The analysis and measurement of electric field crosstalk on the GaAs IC´s microstrip electrodes utilizing internal electro-optic sampling method

Author

Daming, Zhang ; Hongbo, Zhang ; Han, Yang ; Kaixin, Chen ; Wei, Sun ; Wu, Xu ; Maobin, Yi

Author_Institution

State Key Lab. on Integrated Optoelectronics, Jilin Univ., Changchun, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1118

Abstract

The electric field crosstalk of microstrips on a GaAs integrated circuit was calculated by static state finite difference method. The crosstalk was also measured by a practical internal electro-optic sampler. The principles of electro-optic sampling and finite difference method were introduced. When the width of active electrode was 5 μm and the distance between the two electrodes was 10 μm, the practical measured and theory crosstalk value was about 40% and 46%, respectively.

Keywords

III-V semiconductors; crosstalk; electro-optical devices; finite difference methods; gallium arsenide; integrated circuit measurement; microelectrodes; microstrip lines; signal sampling; 10 micron; 5 micron; GaAs; GaAs ICs; GaAs integrated circuit; electric field crosstalk; internal electro-optic sampler; microstrip electrodes; static state finite difference method; Crosstalk; Earth Observing System; Electric variables measurement; Electrodes; Gallium arsenide; Microstrip; Optical beams; Optical sensors; Photonic integrated circuits; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982094

Filename

982094