Title :
The analysis and measurement of electric field crosstalk on the GaAs IC´s microstrip electrodes utilizing internal electro-optic sampling method
Author :
Daming, Zhang ; Hongbo, Zhang ; Han, Yang ; Kaixin, Chen ; Wei, Sun ; Wu, Xu ; Maobin, Yi
Author_Institution :
State Key Lab. on Integrated Optoelectronics, Jilin Univ., Changchun, China
Abstract :
The electric field crosstalk of microstrips on a GaAs integrated circuit was calculated by static state finite difference method. The crosstalk was also measured by a practical internal electro-optic sampler. The principles of electro-optic sampling and finite difference method were introduced. When the width of active electrode was 5 μm and the distance between the two electrodes was 10 μm, the practical measured and theory crosstalk value was about 40% and 46%, respectively.
Keywords :
III-V semiconductors; crosstalk; electro-optical devices; finite difference methods; gallium arsenide; integrated circuit measurement; microelectrodes; microstrip lines; signal sampling; 10 micron; 5 micron; GaAs; GaAs ICs; GaAs integrated circuit; electric field crosstalk; internal electro-optic sampler; microstrip electrodes; static state finite difference method; Crosstalk; Earth Observing System; Electric variables measurement; Electrodes; Gallium arsenide; Microstrip; Optical beams; Optical sensors; Photonic integrated circuits; Semiconductor device measurement;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982094
