A new GTO driving technique for faster switching

Author

Kim, Young-Seok ; Seo, Beom-Seok ; Hyun, Dong-seok

Author_Institution

Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea

fYear

1993

fDate

15-19 Nov 1993

Firstpage

773

Abstract

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has difficulty in realizing high negative di_GQ/dt because of V_RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit. The new turn-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with a chopper circuit verify faster turn-off switching performance

Keywords

choppers (circuits); driver circuits; power convertors; semiconductor device models; switching circuits; thyristor applications; time-domain synthesis; GTO; chopper circuit; maximum reverse gate voltage; negative di_GQ/dt; performance; simulation; stray inductances; switching; thyristors; turn-off gate drive circuit; Anodes; Cathodes; Circuit topology; Drives; Power semiconductor switches; Reluctance generators; Switching circuits; Thyristors; Turning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, Control, and Instrumentation, 1993. Proceedings of the IECON '93., International Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-0891-3

Type

conf

DOI

10.1109/IECON.1993.338983

Filename

338983