A practical SPICE macro model for the IGBT

Author

Tzou, Ying-Yu ; Hsu, Lun-Jun

Author_Institution

Inst. of Control Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1993

fDate

15-19 Nov 1993

Firstpage

762

Abstract

A practical SPICE macro model of the insulated gate bipolar transistor (IGBT) is presented in this paper. The proposed IGBT behavior model is constructed based on an equivalent circuit of the device physical construction and its relevant parameters can be derived from the given data sheet. The proposed new model is especially suitable for the design of gate drive and snubber circuits by using circuit simulation. It is also very useful for the simulation of power electronics systems at a system level. Simulation and experimental results of the IGBT switching behavior have been obtained to verify the proposed IGBT macro model

Keywords

circuit analysis computing; digital simulation; driver circuits; equivalent circuits; insulated gate bipolar transistors; overvoltage protection; power engineering computing; power transistors; semiconductor device models; semiconductor switches; switching circuits; IGBT; SPICE macro model; circuit simulation; design; equivalent circuit; gate drive; insulated gate bipolar transistor; parameters; power electronics; snubber circuits; switching behavior; Circuit simulation; Control engineering; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power electronics; Power system modeling; SPICE; Snubbers;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, Control, and Instrumentation, 1993. Proceedings of the IECON '93., International Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-0891-3

Type

conf

DOI

10.1109/IECON.1993.338985

Filename

338985