Title :
A practical SPICE macro model for the IGBT
Author :
Tzou, Ying-Yu ; Hsu, Lun-Jun
Author_Institution :
Inst. of Control Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A practical SPICE macro model of the insulated gate bipolar transistor (IGBT) is presented in this paper. The proposed IGBT behavior model is constructed based on an equivalent circuit of the device physical construction and its relevant parameters can be derived from the given data sheet. The proposed new model is especially suitable for the design of gate drive and snubber circuits by using circuit simulation. It is also very useful for the simulation of power electronics systems at a system level. Simulation and experimental results of the IGBT switching behavior have been obtained to verify the proposed IGBT macro model
Keywords :
circuit analysis computing; digital simulation; driver circuits; equivalent circuits; insulated gate bipolar transistors; overvoltage protection; power engineering computing; power transistors; semiconductor device models; semiconductor switches; switching circuits; IGBT; SPICE macro model; circuit simulation; design; equivalent circuit; gate drive; insulated gate bipolar transistor; parameters; power electronics; snubber circuits; switching behavior; Circuit simulation; Control engineering; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power electronics; Power system modeling; SPICE; Snubbers;
Conference_Titel :
Industrial Electronics, Control, and Instrumentation, 1993. Proceedings of the IECON '93., International Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-0891-3
DOI :
10.1109/IECON.1993.338985
