Title :
Local stress measurement on metal lines and dielectrics of BEoL pattern by stress relief technique
Author :
Vogel, Dietmar ; Rzepka, Sven ; Michel, Bernd ; Gollhardt, Astrid
Author_Institution :
Micro Mater. Center Chemnitz, Fraunhofer ENAS, Chemnitz, Germany
Abstract :
The paper presents a new measurement method for residual stresses introduced by manufacturing in BEoL structures. Material removal by FIB ion milling is used to release elastically frozen stresses. Normal stress components are calculated from local stress relaxation nearby milled trenches. A validation of the new technique is accomplished by additional bow measurements on defined layers on substrate. Spatially resolved determination of stress values in metal lines and the dielectrics in between demonstrates the capability of the tool for future applications.
Keywords :
focused ion beam technology; internal stresses; semiconductor device manufacture; semiconductor industry; stress analysis; BEoL pattern; BEoL structures; FIB ion milling; dielectrics; local stress measurement; local stress relaxation; material removal; metal lines; residual stress; stress relief technique; Copper; Films; Silicon; Stress; Stress measurement; BEoL; dielectrics; low-K; semiconductor; stress;
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
DOI :
10.1109/SCD.2011.6068737
