Simulations of SF6 plasma etching in the GEC Reference Cell

Here we present 2D simulations of an inductively driven SF₆ silicon etch process in the GEC Reference Cell, performed with Quantemol-D and building upon previous calculations of SF₆ plasma chemistries using Quantemol-P. Pressure and power trends along with chamber wide contour plots of gas-phase species concentrations and fundamental plasma properties are considered. We find good agreement with experimental results, which both validates the underlying model and points to the important role of simulation-assisted plasma process development and optimization.