Recent advances and issues in SiC process and device technologies

Silicon carbide (SiC) is a wide band-gap semiconductor material with potential applications for high power, high frequency, and high temperature devices. Commercially available substrates and devices together with the shown experimental prototypes show very good promises for the future while still a continued improvement in fabrication techniques and wafer substrates are required for economically viable production. The recent advances and critical issues in SiC device process technology and the current state-of-the art devices in SiC are reviewed.