Title :
Characterization of SiON integrated waveguides via FTIR and AFM measurements
Author :
Frers, Torsten ; Hett, Thomas ; Hilleringmann, Ulrich ; Berth, Gerhard ; Widhalm, Alex ; Zrenner, Artur
Author_Institution :
Dept. of Electr. Eng. & Inf. Technol., Univ. of Paderborn, Paderborn, Germany
Abstract :
Silicon oxynitride (SiON) layers for telecommunication device application are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow and enhancement of the PECVD deposition temperature, the absorption loss due to NH bands can be nearly completely erased. Furthermore the surface roughness can be reduced by decreasing the gas flow and rising the deposition temperature. First waveguide structures are introduced and their characterization is presented.
Keywords :
Fourier transform spectra; annealing; atomic force microscopy; infrared spectra; integrated optics; optical communication equipment; optical materials; optical waveguides; plasma CVD; silicon compounds; surface roughness; thin films; AFM; FTIR; Fourier transform infrared spectroscopy; PECVD; SiON; absorption loss; annealing; atomic force microscopy; deposition temperature; films; gas flow; integrated waveguides; plasma enhanced chemical vapor deposition; surface roughness; telecommunication device application; Annealing; Optical waveguides; Propagation losses; Silicon; Surface roughness; Surface treatment;
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
DOI :
10.1109/SCD.2011.6068744
