Title :
Computational study of carrier injection in III-nitride core-shell nanowire-LEDs
Author :
Deppner, Marcus ; Römer, Friedhard ; Witzigmann, Bernd ; Ledig, Johannes ; Neumann, Richard ; Waag, Andreas ; Bergbauer, Werner ; Strassburg, Martin
Author_Institution :
Comput. Electron. & Photonics Group, Univ. of Kassel, Kassel, Germany
Abstract :
We report on the computational analysis of a core-shell GaN/InGaN nanowire LED with a capped pyramidal top. The active region consists of a polar multi quantum well (MQW) at the top, a non-polar MQW along the lateral face and a semi-polar one joining them. Differences in the opto-electronic characteristics of the three crystal orientations can be examined, arising from polarization effects as well as the strain-induced bandedge shift. Furthermore the influence of carrier injection efficiency in a nanowire is investigated.
Keywords :
light emitting diodes; nanowires; quantum wells; GaN-InGaN; III-nitride core-shell nanowire-LED; capped pyramidal top; carrier injection; computational analysis; core-shell GaN/InGaN nanowire LED; opto-electronic characteristics; polar multiquantum well; strain-induced bandedge shift; Computational modeling; Crystals; Gallium nitride; Light emitting diodes; Luminescence; Quantum well devices; Strain;
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
DOI :
10.1109/SCD.2011.6068745
