Title :
Design of an integrated 60 GHz cross-coupled oscillator in SiGe technology
Author :
Agethen, Roman ; Laemmle, Benjamin ; Fischer, Georg ; Weigel, Robert ; Kissinger, Dietmar
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
This paper presents the design of an integrated fully differential 60GHz voltage controlled oscillator in SiGe technology featuring ft = 200 GHz high speed bipolar HBTs. The VCO is based on a differential Colpitts VCO. The core consumes an average amount of 26mA @ 3.3V supply voltage. The tuning bandwidth is about 12%. The utilized buffer at the output consumes additional 64 mA @ 3.3V and provides an output power of 13dBm over the tuning bandwidth. The phase noise @ 1MHz is less than -75 dBc/Hz.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; voltage-controlled oscillators; SiGe; SiGe technology; cross-coupled oscillator; current 26 mA; current 64 mA; differential Colpitts VCO; frequency 1 MHz; frequency 200 GHz; frequency 60 GHz; high speed bipolar HBT; tuning bandwidth; voltage 3.3 V; voltage controlled oscillator; Bandwidth; Phase noise; Power generation; Silicon germanium; Tuning; Voltage-controlled oscillators; Integrated Circuits; MM-Wave; RF Circuit Design; SiGe Heterojunction Bipolar Transistor; VCO;
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
DOI :
10.1109/SCD.2011.6068746
