The study of Ni/4H-SiC SBD

Author

Zhang, Yuming ; Zhang, Yimen ; Niu, Xinjun

Author_Institution

Inst. of Microelectron., Xidian Univ., China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1187

Abstract

Ni/4H-SiC SBD with breakdown voltages in excess 615V were fabricated without passivation technique. The forward voltage drop was around 1.0V to 1.4V at 100A/cm² with different surface treatment. The ideality factor was found to 1.05-1.2. The Schottky barrier height calculated from forward I-V measurements was about 1.5V. The leakage current was found to decrease and breakdown voltage to increase with mesa compared to as-deposited diodes without mesa. It was observed that ICP clean before Schottky metal deposited had better forward and reverse characteristics than other surface preparation way.

Keywords

Schottky diodes; leakage currents; nickel; power semiconductor diodes; semiconductor device breakdown; silicon compounds; surface cleaning; wide band gap semiconductors; 1.0 to 1.4 V; 615 V; I-V characteristics; ICP cleaning; Ni-SiC; Ni/4H-SiC Schottky barrier diode; Schottky barrier height; breakdown voltage; forward voltage drop; ideality factor; leakage current; mesa diode; surface treatment; Annealing; Breakdown voltage; Electric variables; Leakage current; Plasma temperature; Schottky barriers; Schottky diodes; Silicon carbide; Surface cleaning; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982111

Filename

982111