Title :
The study of Ni/4H-SiC SBD
Author :
Zhang, Yuming ; Zhang, Yimen ; Niu, Xinjun
Author_Institution :
Inst. of Microelectron., Xidian Univ., China
Abstract :
Ni/4H-SiC SBD with breakdown voltages in excess 615V were fabricated without passivation technique. The forward voltage drop was around 1.0V to 1.4V at 100A/cm2 with different surface treatment. The ideality factor was found to 1.05-1.2. The Schottky barrier height calculated from forward I-V measurements was about 1.5V. The leakage current was found to decrease and breakdown voltage to increase with mesa compared to as-deposited diodes without mesa. It was observed that ICP clean before Schottky metal deposited had better forward and reverse characteristics than other surface preparation way.
Keywords :
Schottky diodes; leakage currents; nickel; power semiconductor diodes; semiconductor device breakdown; silicon compounds; surface cleaning; wide band gap semiconductors; 1.0 to 1.4 V; 615 V; I-V characteristics; ICP cleaning; Ni-SiC; Ni/4H-SiC Schottky barrier diode; Schottky barrier height; breakdown voltage; forward voltage drop; ideality factor; leakage current; mesa diode; surface treatment; Annealing; Breakdown voltage; Electric variables; Leakage current; Plasma temperature; Schottky barriers; Schottky diodes; Silicon carbide; Surface cleaning; Surface treatment;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982111
