• DocumentCode
    2219240
  • Title

    Monolithically Integrated Silicon-IMPATT Oscillator at 93 GHz

  • Author

    Schöllhorn, C. ; Morschbach, M. ; Oehme, M. ; Hasch, J. ; Irion, H. ; Kasper, E.

  • Author_Institution
    Institut fÿr Halbleitertechnik, Universitÿt Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
  • fYear
    2003
  • fDate
    Oct. 2003
  • Firstpage
    1291
  • Lastpage
    1294
  • Abstract
    In this paper monolithically integrated IMPATT diodes are presented. To prove the concept of completely monolithic integration, no special heatsinks or other constructions to optimize cooling were used. The diodes were grown with molecular beam epitaxy on a high resistivity silicon substrate. S-Parameter measurements were performed from 85 GHz up to 110 GHz, showing high negative impedances above the avalanche frequency. Oscillations at a frequency near 93 GHz were observed with the designed resonator circuit.
  • Keywords
    Conductivity; Cooling; Diodes; Frequency; Heat sinks; Molecular beam epitaxial growth; Monolithic integrated circuits; Oscillators; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2003 33rd European
  • Conference_Location
    Munich, Germany
  • Print_ISBN
    1-58053-834-7
  • Type

    conf

  • DOI
    10.1109/EUMA.2003.340855
  • Filename
    4143261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2219240