Title :
Monolithically Integrated Silicon-IMPATT Oscillator at 93 GHz
Author :
Schöllhorn, C. ; Morschbach, M. ; Oehme, M. ; Hasch, J. ; Irion, H. ; Kasper, E.
Author_Institution :
Institut fÿr Halbleitertechnik, Universitÿt Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Abstract :
In this paper monolithically integrated IMPATT diodes are presented. To prove the concept of completely monolithic integration, no special heatsinks or other constructions to optimize cooling were used. The diodes were grown with molecular beam epitaxy on a high resistivity silicon substrate. S-Parameter measurements were performed from 85 GHz up to 110 GHz, showing high negative impedances above the avalanche frequency. Oscillations at a frequency near 93 GHz were observed with the designed resonator circuit.
Keywords :
Conductivity; Cooling; Diodes; Frequency; Heat sinks; Molecular beam epitaxial growth; Monolithic integrated circuits; Oscillators; Silicon; Substrates;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.340855
