Title :
Fabrication and characterization of AlxGa1-xN/GaN heterostructures with high mobility of two-dimensional electron gas
Author :
Shen, B. ; Zhou, Y.G. ; Zheng, Z.W. ; Liu, J. ; Zhou, H.M. ; Qian, Y. ; Zhang, R. ; Shi, Y. ; Zheng, Y.D.
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
Modulation-doped Al0.22Ga0.78N/GaN heterostructures with different Al0.22Ga0.78N barrier thickness were grown by means of metal-organic chemical vapor deposition. The Al0.22Ga0.78N layer is still pseudomorphic growth when its thickness is 53 nm. The mobility of the two dimensional electron gas (2DEG) at the heterointerfaces is much higher than that of the electrons in GaN films at both 300 K and 77 K. The dramatic decrease of the 2DEG mobility in an Al0.22Ga0.78N/GaN heterostructure corresponds to the partial relaxation of the Al0.22Ga0.78N barrier.
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; electron mobility; gallium compounds; semiconductor growth; semiconductor heterojunctions; two-dimensional electron gas; wide band gap semiconductors; 300 K; 77 K; Al0.22Ga0.78N-GaN; Al0.22Ga0.78N/GaN modulation-doped heterostructure; electron mobility; metalorganic chemical vapor deposition; pseudomorphic growth; two-dimensional electron gas; Atomic layer deposition; Epitaxial layers; Fabrication; Gallium nitride; Ohmic contacts; Reflection; Root mean square; Shape; Temperature dependence;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982112
