Title :
Effect of additional HCl flow on the surface morphology of GaN grown on sapphire by HVPE
Author :
Xiu, Xiangqian ; Zhang, Rong ; Lu, Dianqing ; Gu, Shulin ; Shen, Bo ; Shi, Yi ; Youdou, Zheng
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
The effect of additional HCl on the surface morphology of HVPE GaN was investigated. The introduction of additional HCl to the growth zone altered the polar growth direction at the initial growth stage, and finally the Ga-face polarity GaN films with smooth surface were obtained.
Keywords :
III-V semiconductors; gallium compounds; polar semiconductors; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; Al2O3; GaN; GaN film; HCl; HVPE growth; additional HCl flow; polar semiconductor; sapphire substrate; surface morphology; Etching; Gallium nitride; Human computer interaction; Optical devices; Optical films; Rough surfaces; Scanning electron microscopy; Substrates; Surface morphology; Surface roughness;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982113
