Title :
An analytical model for AlGaN/GaN HFET and the electrical characteristics
Author :
Liu, Nuo ; Xia, Jianxin
Author_Institution :
Dept. of Microelectron. Sci. & Eng., Univ. of Electron. Sci. & Technol. of China, Sichuan, China
Abstract :
An new velocity-field analytical model for AlGaN/GaN HFETs is presented which includes the compensation effect. It is in good agreement with Monte Carlo results. We also investigate the electrical characteristics of the devices. The model predicts that the compensation effect could not be neglected when the compensation ratio r>0.6, and the I-V characteristics will fall when the gate voltage Vg is high enough.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; compensation; field effect transistors; gallium compounds; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HFETs; I-V characteristics; Monte Carlo results; compensation effect; compensation ratio; electrical characteristics; gate voltage; velocity-field analytical model; Aluminum gallium nitride; Analytical models; Electric variables; FETs; Gallium nitride; HEMTs; MODFETs; Monte Carlo methods; Predictive models; Semiconductor process modeling;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982115
