• DocumentCode
    2219327
  • Title

    An analytical model for AlGaN/GaN HFET and the electrical characteristics

  • Author

    Liu, Nuo ; Xia, Jianxin

  • Author_Institution
    Dept. of Microelectron. Sci. & Eng., Univ. of Electron. Sci. & Technol. of China, Sichuan, China
  • Volume
    2
  • fYear
    2001
  • fDate
    22-25 Oct. 2001
  • Firstpage
    1202
  • Abstract
    An new velocity-field analytical model for AlGaN/GaN HFETs is presented which includes the compensation effect. It is in good agreement with Monte Carlo results. We also investigate the electrical characteristics of the devices. The model predicts that the compensation effect could not be neglected when the compensation ratio r>0.6, and the I-V characteristics will fall when the gate voltage Vg is high enough.
  • Keywords
    III-V semiconductors; Monte Carlo methods; aluminium compounds; compensation; field effect transistors; gallium compounds; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HFETs; I-V characteristics; Monte Carlo results; compensation effect; compensation ratio; electrical characteristics; gate voltage; velocity-field analytical model; Aluminum gallium nitride; Analytical models; Electric variables; FETs; Gallium nitride; HEMTs; MODFETs; Monte Carlo methods; Predictive models; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.982115
  • Filename
    982115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2219327