Title :
The oxidation of GaN epilayers in dry oxygen
Author :
Xu, X.F. ; Zhang, R. ; Chen, P. ; Zhu, Y.G. ; Chen, Z.Z. ; Xie, S.Y. ; Li, W.P. ; Zheng, Y.D.
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
The oxidation characteristics of GaN epilayers in dry oxygen have been studied. Bulk θ-2θ X-ray diffraction (XRD) data showed that GaN began to be oxidized at 800°C for 6 h. The oxide was identified as monoclinic β-Ga2O3. The oxide layers were observed by a scanning electron microscope, which showed a rough oxide surface and an expansion of the volume of 40%. There is a rapid oxidation process in the initial stage of oxidation, followed by a relatively slow process when the temperature was over 1000°C. The two-stage oxidation is limited by an interfacial reaction mechanism and a diffusion mechanism, respectively. The photoluminescence (PL) is seriously influenced by the oxidation.
Keywords :
III-V semiconductors; X-ray diffraction; gallium compounds; oxidation; photoluminescence; rough surfaces; scanning electron microscopy; semiconductor epitaxial layers; wide band gap semiconductors; 10 min to 6 h; 800 to 1100 C; Ga2O3; GaN; GaN epilayers; XRD; bulk &thetas;-2&thetas; X-ray diffraction data; diffusion mechanism; dry oxygen; interfacial reaction mechanism; monoclinic β-Ga2O3; oxidation characteristics; oxide layers; photoluminescence; rapid oxidation process; rough oxide surface; scanning electron microscope; two stage oxidation; volume expansion; Gallium nitride; Oxidation; Oxygen; Physics; Powders; Scanning electron microscopy; Temperature measurement; Water pollution; X-ray diffraction; X-ray scattering;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982116
