DocumentCode
2219362
Title
Characterization of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures with two subbands occupied
Author
Zheng, Z.W. ; Shen, B. ; Jiang, C.P. ; Zhang, R. ; Shi, Y. ; Zheng, Y.D. ; Guo, S.L. ; Zheng, G.Z. ; Chu, J.H.
Author_Institution
Dept. of Phys., Nanjing Univ., China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1209
Abstract
Magnetotransport properties of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures have been investigated. We extrapolate that the second subband in the triangular quantum well at the heterointerface starts to be populated at a 2DEG concentration of about 7.23 × 1012 cm-1. The quantum scattering time related to the first subband is obtained as 0.144-0.146 ps for the heterostructures. Intersubband scattering is also observed in the heterostructures.
Keywords
III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; gallium compounds; interface states; semiconductor quantum wells; two-dimensional electron gas; wide band gap semiconductors; 0.144 to 0.146 ps; 2DEG characterization; 2DEG concentration; Al0.22Ga0.78N-GaN; AlxGa1-xN/GaN heterostructures; Dingle plots; Shubnikov-de Haas oscillations; Van der Pauw Hall measurements; diagonal magnetoresistivity; first subband; heterointerface; intersubband scattering; magnetotransport properties; occupied subbands; quantum scattering time; second subband; triangular quantum well; two-dimensional electron gas; Electrons; Gallium nitride; Laboratories; Magnetic field measurement; Magnetoresistance; Particle scattering; Physics; Piezoelectric polarization; Solid state circuits; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982117
Filename
982117
Link To Document