Structural study of chemical vapor deposition of Si on GaN

Author

Chen, Ping ; Zheng, Youdou ; Zhu, Shunming ; Xi, Dongjuan ; Zhao, Zuoming ; Gu, Shulin ; Han, Ping

Author_Institution

Dept. of Phys., Nanjing Univ., China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1213

Abstract

We have grown high quality Si epilayers on wurtzite gallium nitride substrate by low-pressure chemical vapor deposition. X-ray photoelectron spectra and Auger electron spectra were employed to analyze the components and chemical structures of Si/GaN. The results indicated that there was nitrogen diffusion from the GaN layer to the Si layer and substitutional N accumulation near the interface, which agreed with carrier concentration obtained from electrical conductivity measurements.

Keywords

Auger electron spectra; X-ray photoelectron spectra; carrier density; chemical interdiffusion; chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; Auger electron spectra; GaN; LPCVD; Si-GaN; X-ray photoelectron spectra; XRD; carrier concentration; chemical structures; electrical conductivity; high quality Si epilayers; interface N accumulation; low-pressure chemical vapor deposition; nitrogen diffusion; wurtzite GaN substrate; Chemical analysis; Chemical vapor deposition; Etching; Gallium nitride; Inductors; Nitrogen; Phonons; Semiconductor films; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982118

Filename

982118