Title :
Effect of dislocations in photoelectrochemical etching process of N-type GaN
Author :
Chen, K.L. ; Zhang, R. ; Gu, S.L. ; Lu, D.Q. ; Xiu, X.Q. ; Yu, H.Q. ; Shen, B. ; Shi, Y. ; Zheng, Y.D.
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
N-type GaN films grown by Hydride Vapor Phase Epitaxy technique were etched under different conditions at room temperature. Direct evidence of etch-stop effect of dislocations during photoelectrochemical (PEC) etching has been found. Further investigation of the mechanism has been discussed.
Keywords :
III-V semiconductors; dislocation etching; gallium compounds; photoelectrochemistry; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; GaN; dislocation effect; etch-stop effect; hydride vapor phase epitaxy; n-type GaN film; photoelectrochemical etching; Dry etching; Gallium nitride; Lighting; Optical films; Optical materials; Photoconductivity; Plasma temperature; Scanning electron microscopy; Surface morphology; Wet etching;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982119
