Title :
On estimating bounds of the quiescent current for IDDQ testing
Author :
Ferré, Antoni ; Figueras, Joan
Author_Institution :
Univ. Politecnica de Catalunya, Barcelona, Spain
fDate :
28 Apr-1 May 1996
Abstract :
The quiescent current (IDDQ) consumed by an IC is a good indicator of the presence of a large of defects. However, the effectiveness of IDDQ testing requires appropriate discriminability of defective and defect-free currents and hence it becomes necessary to estimate the currents involved in order to design the IDDQ sensing circuitry. In this work, we present a method to estimate the non-defective IDDQ consumption based on a hierarchical approach using layout (device), electrical (cell) and logic (circuit) information. The maximum of the defect-free IDDQ is obtained with a technique based on ATPG. The results show that the proposed method gives the maximum defect-free IDDQ for small circuits. For large circuits, heuristics to find lower and upper bounds of the maximum defect-free IDDQ are presented. Uncertainty margins lower than 15% have been found in the circuits experimented on
Keywords :
CMOS integrated circuits; VLSI; automatic testing; integrated circuit testing; leakage currents; logic testing; ATPG; CMOS ICs; IDDQ testing; hierarchical approach; quiescent current bounds; sensing circuitry design; CMOS technology; Channel bank filters; Leakage current; Logic circuits; MOS devices; MOSFETs; P-n junctions; Subthreshold current; Testing; Threshold voltage;
Conference_Titel :
VLSI Test Symposium, 1996., Proceedings of 14th
Conference_Location :
Princeton, NJ
Print_ISBN :
0-8186-7304-4
DOI :
10.1109/VTEST.1996.510843