Title :
Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser
Author :
Yongqiang Ning ; Xin Gao ; Lijun Wang
Author_Institution :
Lab. of Excited State Processes, Chinese Acad. of Sci., Changchun, China
Abstract :
Coupled multi-layers InGaAs/GaAs quantum dots materials were grown by MBE. The lasers were fabricated in the geometry of oxide stripes. The temperature dependence of threshold current density is measured for the lasers with different cavity lengths. The average threshold current density is as low as 48 A/cm2, a record as we know. The laser with long cavity exhibits lasing at ground QDs state while lasing at excited quantum dot state or wetting layer state dominates the transition for lasers with shorter cavity.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; quantum dot lasers; InGaAs-GaAs; InGaAs/GaAs coupled multilayer quantum dot laser; MBE growth; cavity length dependence; excited state; ground state; lasing transition; oxide stripe geometry; temperature dependence; threshold current density; wetting layer state; Density measurement; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Laser transitions; Optical coupling; Optical materials; Quantum dot lasers; Temperature dependence; Threshold current;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982126
