Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser

Author

Yongqiang Ning ; Xin Gao ; Lijun Wang

Author_Institution

Lab. of Excited State Processes, Chinese Acad. of Sci., Changchun, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1249

Abstract

Coupled multi-layers InGaAs/GaAs quantum dots materials were grown by MBE. The lasers were fabricated in the geometry of oxide stripes. The temperature dependence of threshold current density is measured for the lasers with different cavity lengths. The average threshold current density is as low as 48 A/cm², a record as we know. The laser with long cavity exhibits lasing at ground QDs state while lasing at excited quantum dot state or wetting layer state dominates the transition for lasers with shorter cavity.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; quantum dot lasers; InGaAs-GaAs; InGaAs/GaAs coupled multilayer quantum dot laser; MBE growth; cavity length dependence; excited state; ground state; lasing transition; oxide stripe geometry; temperature dependence; threshold current density; wetting layer state; Density measurement; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Laser transitions; Optical coupling; Optical materials; Quantum dot lasers; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982126

Filename

982126