Thermal modeling of BOX/DTI enclosed power devices with Green´s function approach

Accurate thermal models for power devices are crucial due to the simultaneous introduction of deep trenches (DTI) and silicon on insulator (SOI) technology. A computationally efficient geometry dependent thermal model is presented that avoids the time and cost penalty of numerical thermal simulations and utilizes the Green´s function approach in combination with mixed boundary conditions. The derived model is accurate (relative temperature error <;10%) and valid for dimensions ranging between 5μm and 200μm. The new model allows for on-the-fly calculations of the thermal resistance R_th as well as thermal coupling coefficients for multi-finger devices, enabling predictive modeling and concurrent engineering.