A Through Silicon Via concept for sensor applications

Author

Neumann, V. ; Hiess, A. ; Jahn, A. ; Merkel, U. ; Richter, K. ; Viehweger, K. ; Wenzel, C. ; Bartha, J.W.

Author_Institution

Inst. of Semicond. & Microsyst. Technol., Dresden Univ. of Technol., Dresden, Germany

fYear

2011

fDate

27-28 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

The use of Through Silicon Via (TSV) extends to different areas of electronics. Besides its utilization for logic and memory chips, a growing attention has been spent to sensor applications in the last years. Each application has its specific requirements which affect the whole processing scheme. Typically TSV´s are generated by filling blind holes with copper and thinning the wafer afterwards, or by coating through holes with copper. Here we present an alternative concept which can be applied for biochemical sensors, so that a blind hole is created stopping on a SiO₂ membrane. By this the need for a post wafer thinning is avoided.

Keywords

chemical sensors; coatings; membranes; three-dimensional integrated circuits; TSV concept; biochemical sensor; blind hole filling; coating through hole; logic chip; membrane; memory chip; post wafer thinning; sensor application; through silicon via concept; Copper; Etching; Gold; Metallization; Silicon; Through-silicon vias; TSV; deep reactive ion etching; electrochemical deposition; metallization; sensor application; through silicon via;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden (SCD), 2011

Conference_Location

Dresden

Print_ISBN

978-1-4577-0431-4

Type

conf

DOI

10.1109/SCD.2011.6068771

Filename

6068771