Title :
A Through Silicon Via concept for sensor applications
Author :
Neumann, V. ; Hiess, A. ; Jahn, A. ; Merkel, U. ; Richter, K. ; Viehweger, K. ; Wenzel, C. ; Bartha, J.W.
Author_Institution :
Inst. of Semicond. & Microsyst. Technol., Dresden Univ. of Technol., Dresden, Germany
Abstract :
The use of Through Silicon Via (TSV) extends to different areas of electronics. Besides its utilization for logic and memory chips, a growing attention has been spent to sensor applications in the last years. Each application has its specific requirements which affect the whole processing scheme. Typically TSV´s are generated by filling blind holes with copper and thinning the wafer afterwards, or by coating through holes with copper. Here we present an alternative concept which can be applied for biochemical sensors, so that a blind hole is created stopping on a SiO2 membrane. By this the need for a post wafer thinning is avoided.
Keywords :
chemical sensors; coatings; membranes; three-dimensional integrated circuits; TSV concept; biochemical sensor; blind hole filling; coating through hole; logic chip; membrane; memory chip; post wafer thinning; sensor application; through silicon via concept; Copper; Etching; Gold; Metallization; Silicon; Through-silicon vias; TSV; deep reactive ion etching; electrochemical deposition; metallization; sensor application; through silicon via;
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
DOI :
10.1109/SCD.2011.6068771
