A systems approach to electromigration prevention in bipolar integrated circuits

Author

Dunkley, James L. ; Metzler, Richard A.

Author_Institution

Silicon Syst. Inc., Tustin, CA, USA

fYear

1988

fDate

12-13 Sep 1988

Firstpage

232

Lastpage

235

Abstract

A rigorous statistical technique is presented for properly modeling the design rules for the maximum current density permitted to pass through the interconnecting metal of an integrated circuit. The electromigration model includes consideration of the circuit´s overall manufacturing and systems environment. Process variables, assembly variables, and variations in the system´s electrical and thermal environment are statistically accounted for when determining current density limits in the metallization. This assures that the reliability requirements of the circuit are met

Keywords

bipolar integrated circuits; circuit reliability; current density; electromigration; integrated circuit technology; metallisation; statistical analysis; assembly variables; bipolar integrated circuits; design rule modelling; electrical environment; electromigration prevention; interconnecting metal; maximum current density; metallization; process variables; reliability; statistical technique; systems environment; thermal environment; Assembly systems; Bipolar integrated circuits; Current density; Electromigration; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit modeling; Integrated circuit reliability; Predictive models; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1988.51086

Filename

51086