DocumentCode
2219977
Title
Analysis of the operating point of a novel multiple-active-region tunneling-regenerated vertical-cavity surface-emitting laser
Author
Wenjun, Zhu ; Xia, Guo ; Peng, Lian ; Deshu, Zou ; Guo, Gao ; GuangDi, Shen
Author_Institution
Beijing Optoelectronic Technol. Lab., Beijing Polytech. Univ., China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1306
Abstract
A novel multiple-active-region tunneling-regenerated vertical-cavity surface-emitting laser (VCSEL) with a greater-than-unity differential quantum efficiency is proposed. This novel VCSEL is expected to have an improved performance, specifically, reduced threshold current and heightened output power. The optimum reflectivity in terms of output power is determined for this novel VCSELs with fixed supply current and series resistance as a parameter. We compare the output power of the novel structure with that of the traditional structure at the same reflectivity and injected current. Also, we compare the threshold current of the novel structure with that of the traditional structure at the same reflectivity and output power. Finally, we prove the advantage of the novel structure in theory.
Keywords
reflectivity; semiconductor lasers; surface emitting lasers; greater-than-unity differential quantum efficiency; injected current; multiple-active-region tunneling-regenerated VCSEL; operating point; output power; reflectivity; series resistance; threshold current; vertical-cavity surface-emitting laser; Laser theory; Optical losses; Optical pumping; Power generation; Radiative recombination; Reflectivity; Spontaneous emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982141
Filename
982141
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