Title :
17-36 GHz broadband PHEMT MMIC power amplifier for point-to-multipoint applications
Author :
Lee, Y.C. ; Park, C.S.
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., South Korea
Abstract :
A broadband MMIC power amplifier operating from 17 to 36 GHz is developed for point-to-multipoint applications using 0.25 μm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT). The amplifier is fully monolithic, with all matching, biasing, and DC block circuitry included on the chip. Operated under 5 V power supply, the two-stage balanced power amplifier has 11 dB small-signal gain with a 3 dB bandwidth from 17 to 36 GHz. The output powers at 1 dB compression are 20 dBm at 26 and 28 GHz and greater than 23 dBm at 30.5 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; differential amplifiers; gallium arsenide; indium compounds; wideband amplifiers; 0.25 micron; 11 dB; 17 to 36 GHz; 5 V; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs; DC block circuitry; biasing circuitry; broadband PHEMT MMIC power amplifier; matching circuitry; output powers; point-to-multipoint applications; pseudomorphic high electron mobility transistor; small-signal gain; two-stage balanced power amplifier; Broadband amplifiers; Electron mobility; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; MMICs; MODFETs; PHEMTs; Power amplifiers;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982144
