Title :
A divide-by-2 static frequency divider with AlGaAs/GaAs HBTs technology
Author :
Li, Xian-Jie ; Zeng, Qing-Ming ; Xu, Xiao-Chun ; Guo, Jian-Kui ; Wang, Quan-Shu ; Liu, Wei-Ji ; Liang, Chun-Guang
Author_Institution :
State Key Lab. of ASIC, Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
A divide-by-2 Static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was described based on a master-slave D flip-flops. For a HBT with a 3.5×8 μm2 emitter had a DC current gain of 30. The unity current gain cutoff frequency (Ft) and the maximum oscillation frequency (Fmax) of the HBTs were extrapolated to about 40 GHz. The IC was tested from DC to 8 GHz and demonstrated proper function under a supply voltage of -7 V to -8 V.
Keywords :
III-V semiconductors; aluminium compounds; bipolar logic circuits; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; -7 to -8 V; 0 to 8 GHz; 40 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT IC; DC current gain; divide-by-two static frequency divider; master-slave D flip-flop; maximum oscillation frequency; unity current gain cutoff frequency; Application specific integrated circuits; Bipolar transistors; Circuit testing; Frequency conversion; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Integrated circuit technology; MODFETs; Master-slave;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982147
