Amplifier performance of dual emitter HBT for MMIC power amplifier applications

Author

Lee, Y.S. ; Park, C.S.

Author_Institution

Sch. of Eng., Inf. & Commun. Univ., Taejon, South Korea

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1344

Abstract

A new emitter/base finger structure of InGaP/GaAs HBT has been designed as a unit cell for multi-finger integration, and evaluated the gain performance compared with the conventional emitter/base structure. We have designed a unit cell composed of 2 emitter fingers with 1 base finger (1B2E, dual emitter) and evaluated the performance compared with the conventional structure: the unit cell composed of 1 emitter finger and 2 base fingers (2B1E). 1B2E has several advantages compared to 2B1E: 2 times of collector current density, thermal stability, and high power gain.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; semiconductor device measurement; wide band gap semiconductors; 1B2E dual emitter; InGaP-GaAs; MMIC power amplifier applications; amplifier performance; collector current density; dual emitter HBT; emitter/base finger structure; gain performance; high power gain; multi-finger integration; thermal stability; Contact resistance; Design engineering; Doping; Fingers; Global warming; Heterojunction bipolar transistors; MMICs; Performance gain; Power amplifiers; Power engineering and energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982151

Filename

982151