Title :
Numerical simulation of DC characteristic of InP/InGaAs based optically controlled HEMT
Author :
Renwu, Fu ; Ping, Huang ; Chao, Chen
Author_Institution :
Dept. of Phys., Xiamen Univ., China
Abstract :
A new analytical formula of DC characteristics is presented. It shows excellent agreement with experimental data. For the conditions of Vψ=1.4 V and Vr=1.0 V, the channel conductance gd is 3.09×10-2 mS/mm, the transconductance gm is 22.2 mS/mm, and the cut-off frequency fT is 16.3 GHz. The mechanism of optically controlled HEMT is explored. Under stable illumination, it shows good agreement with experimental data. The optical responsivity of HEMT is up to 11.4 A/W.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; phototransistors; semiconductor device models; #InP/InGaAs based optically controlled HEMT; 1.0 V; 1.4 V; 16.3 GHz; 22.2 mS/mm; 3.09×10-2 mS/mm; DC characteristic; InP-InGaAs; channel conductance; cut-off frequency; numerical simulation; optical responsivity; optically controlled HEMT; stable illumination; transconductance; Equations; HEMTs; Indium gallium arsenide; Indium phosphide; Lighting; Numerical simulation; Optical control; Optical noise; Optical receivers; Photodetectors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982153
