DocumentCode
2220299
Title
An optimized rapid thermal processor for GaAs annealing
Author
Wu-Xia, Li ; Xun-Chun, Liu ; Su-Qin, Wang ; Run-Mei, Wang ; Ming-Xiong, Luo ; Long-Hai, Zhang
Author_Institution
Microelectron. R&D Center, Chinese Acad. of Sci., Beijing, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1356
Abstract
The distortion and evenness of GaAs wafer after annealing are critical parameters in micro-processing by projective aligner lithography. In this paper, we present an optimized rapid thermal processor and the excellent performance of GaAs MESFET we got with it. It shows that the simply developed processor can affectively improve the GaAs wafer evenness, which is important for projective photolithography.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; optimisation; photolithography; rapid thermal annealing; semiconductor device measurement; surface topography; GaAs; GaAs MESFET; GaAs annealing; GaAs wafer evenness; micro-processing; projective aligner lithography; projective photolithography; rapid thermal processor; Adhesives; Contamination; Gallium arsenide; Lamps; Lithography; Microelectronics; Rapid thermal annealing; Rapid thermal processing; Temperature distribution; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982154
Filename
982154
Link To Document