DocumentCode
2220348
Title
Research for metallic oxide single electron devices
Author
Jiang, Jianfei
Author_Institution
Res. Inst. of Micro/Nanometer Sci. & Technol., Shanghai Jiao Tong Univ., China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1366
Abstract
The low dimensionality (2D, 1D and 0D) and the localized nature of the electron wave functions (or localized density of state: LDOS) in the metallic oxides are investigated. The single electron effects, the single electron devices of the quantum dot (0D) and LDOS for the metallic oxides are studied. The potential of an important and a broader range applications in nanoelectronics for the metallic oxide is reviewed.
Keywords
electronic density of states; nanoelectronics; quantum dots; resonant tunnelling devices; single electron devices; wave functions; LDOS; electron wave functions; localized density of states; low dimensionality; metallic oxide single electron devices; nanoelectronics; quantum dot; single electron effects; Capacitors; Chemical compounds; Copper; Doping; Insulation; Magnetic materials; Microelectronics; Nanoelectronics; Single electron devices; Superconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982156
Filename
982156
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