Title :
Research for metallic oxide single electron devices
Author_Institution :
Res. Inst. of Micro/Nanometer Sci. & Technol., Shanghai Jiao Tong Univ., China
Abstract :
The low dimensionality (2D, 1D and 0D) and the localized nature of the electron wave functions (or localized density of state: LDOS) in the metallic oxides are investigated. The single electron effects, the single electron devices of the quantum dot (0D) and LDOS for the metallic oxides are studied. The potential of an important and a broader range applications in nanoelectronics for the metallic oxide is reviewed.
Keywords :
electronic density of states; nanoelectronics; quantum dots; resonant tunnelling devices; single electron devices; wave functions; LDOS; electron wave functions; localized density of states; low dimensionality; metallic oxide single electron devices; nanoelectronics; quantum dot; single electron effects; Capacitors; Chemical compounds; Copper; Doping; Insulation; Magnetic materials; Microelectronics; Nanoelectronics; Single electron devices; Superconductivity;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982156
