DocumentCode
2220528
Title
Study on resonant tunneling diode
Author
Wei-lian, Guo ; Ping-juan, Niu ; Hui-lai, Liang ; Shi-lin, Zhang
Author_Institution
Nat. Lab. for Superlattices & Microstructures, Beijing, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1403
Abstract
We designed and fabricated an AlAs/GaAs/InGaAs/GaAs/AlAs Resonant Tunneling Diode (RTD) with two types of epitaxial structures grown by Molecular Beam Epitaxy (MBE). The devices have shown excellent I-V characteristics with peak-valley current ratio (PVCR) 5:1 at room temperature and a high peak current density. The DC and AC characterizations are reported and analyzed.
Keywords
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; microwave diodes; molecular beam epitaxial growth; resonant tunnelling diodes; 45 MHz to 26.5 GHz; AC characterization; AlAs-GaAs-InGaAs-GaAs-AlAs; DC characterization; I-V characteristics; MBE growth; RTD fabrication; epitaxial structures; molecular beam epitaxy; peak current density; peak-valley current ratio; resonant tunneling diode; Circuit simulation; Current density; Gallium arsenide; Laboratories; Lungs; Molecular beam epitaxial growth; Resonant tunneling devices; Semiconductor diodes; Superlattices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982164
Filename
982164
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