UHV/CVD self-organized growth of Ge quantum dots

Author

Huang, Wentao ; Luo, Guangli ; Shi, Jin ; Li, Chen ; Chen, Peiyi ; Tsien, Pei-Hsin

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1406

Abstract

Ge quantum dots were self-organized grown using a UHV/CVD system. The results show that the scale, morphology and distribution of the quantum dots were greatly influenced by the growth temperature. Ge quantum dots grown at 550°C and 600°C show two typical scales, distributed uniformly, and the density of the quantum dots is higher than 10¹⁰/cm². The bottom diameter of the bigger quantum dots grown at 550°C was about 80 nm, while the smaller 45 nm. The scales of the quantum dots grown at 700°C were obviously bigger with a worse uniformity.

Keywords

chemical vapour deposition; elemental semiconductors; germanium; self-assembly; semiconductor growth; semiconductor quantum dots; 45 nm; 550 degC; 600 degC; 700 degC; 80 nm; Ge; Ge quantum dots; UHV/CVD self-organized growth; growth temperature; quantum dot density; quantum dot diameter; quantum dot distribution; quantum dot morphology; quantum dot scale; quantum dot uniformity; Atomic force microscopy; Germanium silicon alloys; Morphology; Optical devices; Quantum dots; Scanning electron microscopy; Semiconductor nanostructures; Silicon germanium; Substrates; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982165

Filename

982165