• DocumentCode
    2220606
  • Title

    Single electron memory effect in TiOx nano-structure

  • Author

    Yin, Y. ; Jiang, J.F. ; Cai, Q.Y. ; Huang, P. ; Shen, B. ; Chen, Z.C. ; Yang, T.

  • Author_Institution
    Res. Inst. of Micro/Nano Sci. & Technol., Shanghai Jiao Tong Univ., China
  • Volume
    2
  • fYear
    2001
  • fDate
    22-25 Oct. 2001
  • Firstpage
    1415
  • Abstract
    The single electron memory effect in TiOx nanostructure (thickness 3nm, length 150 nm and width 150 nm) based on localized density of state (LDOS) in metallic oxides is observed. The potential of application in the single electron memory is discussed.
  • Keywords
    Coulomb blockade; electronic density of states; localised states; titanium compounds; 150 nm; 3 nm; LDOS; TiO2; TiOx nano-structure; localized density of states; single electron memory effect; Circuits; Electrical resistance measurement; Electrodes; Nanostructures; Resins; Single electron memory; Sociotechnical systems; Spectroscopy; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.982168
  • Filename
    982168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2220606