Title :
Analysis of lattice thermal conductivity of Si thin films
Author :
He, Ping ; Tian, Lilin ; Liu, Litian ; Li, Zhijian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
We present a new lateral thermal conductivity model which include the new relaxation time expressions for phonon scattering considering detailed information of the phonon dispersion. The effect of phonon dispersion on the three-phonon process is considered in detail. The experimental data of the temperature dependence of lateral thermal conductivity of silicon crystal thin films fits well using these expressions.
Keywords :
elemental semiconductors; modelling; phonon dispersion relations; semiconductor thin films; silicon; thermal conductivity; Si; Si crystal thin films; lateral thermal conductivity model; phonon boundary scattering; phonon dispersion; relaxation time expressions; temperature dependence; three-phonon process; Conductive films; Dispersion; Lattices; Phonons; Scattering; Semiconductor films; Semiconductor thin films; Silicon; Thermal conductivity; Thermal resistance;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982176
