DocumentCode
2220777
Title
Analysis of lattice thermal conductivity of Si thin films
Author
He, Ping ; Tian, Lilin ; Liu, Litian ; Li, Zhijian
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1449
Abstract
We present a new lateral thermal conductivity model which include the new relaxation time expressions for phonon scattering considering detailed information of the phonon dispersion. The effect of phonon dispersion on the three-phonon process is considered in detail. The experimental data of the temperature dependence of lateral thermal conductivity of silicon crystal thin films fits well using these expressions.
Keywords
elemental semiconductors; modelling; phonon dispersion relations; semiconductor thin films; silicon; thermal conductivity; Si; Si crystal thin films; lateral thermal conductivity model; phonon boundary scattering; phonon dispersion; relaxation time expressions; temperature dependence; three-phonon process; Conductive films; Dispersion; Lattices; Phonons; Scattering; Semiconductor films; Semiconductor thin films; Silicon; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982176
Filename
982176
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