Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA)

Author

Lin, Liang ; Zhou, Liang ; Yin, Wen-Yan ; Huang, Lin-Juan

Author_Institution

Key Lab. of Minist. of Educ. of Design & EMC of High-Speed Electron. Syst., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2012

fDate

6-10 Aug. 2012

Firstpage

329

Lastpage

333

Abstract

In this paper, electrothermal breakdown of a Ku-band GaAs MESFET-based low noise amplifier (LNA) is investigated in the presence of an intentional electromagnetic pulse. The injected EMP is generated by one special high power microwave system, and its waveform can be adjusted effectively. The input-output responses of a set of LNAs are measured and compared for different injected EMP widths. It is observed that the first-stage GaAs MESFET in the LNA can be easily broken down, which is mainly caused by the rapid temperature rise in its channel region. This research can provide some useful knowledge for protecting some semiconductor active devices from the attack of an injected EMP.

Keywords

III-V semiconductors; MOSFET; electromagnetic pulse; gallium arsenide; low noise amplifiers; microwave amplifiers; microwave field effect transistors; semiconductor device breakdown; GaAs; Ku-band MESFET-based low noise amplifier; LNA; channel region; electrothermal breakdown; high power microwave system; injected EMP widths; intentional electromagnetic pulse; semiconductor active devices; temperature rise; Degradation; EMP radiation effects; Electric breakdown; Gallium arsenide; Logic gates; MESFETs; Radio frequency; GaAs; Intentional electromagnetic pulse; LNA; MESFET; breakdown; degradation; energy capability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (EMC), 2012 IEEE International Symposium on

Conference_Location

Pittsburgh, PA

ISSN

2158-110X

Print_ISBN

978-1-4673-2061-0

Type

conf

DOI

10.1109/ISEMC.2012.6351827

Filename

6351827