DocumentCode :
2221516
Title :
1 GHz GaAs ADC building blocks
Author :
Thomas, Francois ; Debrie, Francis ; Gloanec, Maurice ; Martin, Philippe ; Ruggeri, Stephane ; Uro, Jean Marie
Author_Institution :
Thomson Hybrides & Microondes, Orsay, France
fYear :
1988
fDate :
7-9 June 1988
Firstpage :
1457
Abstract :
Commercial GaAs ICs for high-speed (6-bit, 1G-sample/s) data acquisition are under development, using a low-cost conventional D-MESFET technology. First-generation sample-and-holds (S/Hs) and comparators are currently available as samples. Diode bridge and FET switch S/Hs have been compared; best performances have been achieved with diode bridge switches: 1 ns, 6-bit. Comparators provide 6-bit sensitivity at 1 GHz, but require offset adjust. Second-generation ADC (analog-to-digital converter) building blocks are at the experimental stage. An autobiased differential input stage is suitable for 4-bit ADC. A dynamic cell involving autocalibration techniques required for 6-bit ADC, is at the experimental stage. Using these blocks, a 4-bit 1G-sample/s full Nyquist single-chip ADC, including a S/H, has been designed and is in fabrication. A 6-bit ADC is currently under design.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; analogue-digital conversion; field effect integrated circuits; gallium arsenide; D-MESFET technology; FET switch; GaAs; analog-to-digital converter; autobiased differential input stage; autocalibration techniques; comparators; data acquisition; diode bridge switches; dynamic cell; full Nyquist single-chip ADC; sample-and-holds; Data acquisition; Dielectric thin films; Diodes; FETs; Gallium arsenide; Integrated circuit technology; MESFETs; Silicon; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo, Finland
Type :
conf
DOI :
10.1109/ISCAS.1988.15204
Filename :
15204
Link To Document :
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