DocumentCode :
22216
Title :
Hybrid Amorphous/Nanocrystalline Silicon Schottky Diodes for High Frequency Rectification
Author :
Sanz-Robinson, Josue ; Rieutort-Louis, Warren ; Yingzhe Hu ; Liechao Huang ; Verma, Naveen ; Wagner, Steffen ; Sturm, James C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
Volume :
35
Issue :
4
fYear :
2014
fDate :
Apr-14
Firstpage :
425
Lastpage :
427
Abstract :
We report hybrid amorphous (a-Si)/nanocrystalline (nc-Si) Schottky diodes for rectification at high frequencies. All fabrication steps are done at , making them compatible with processing on plastic. The diodes have a high current density (5 A/cm2 at 1 V and 100 A/cm2 at 2 V) and on-to-off current ratio (over 1000 for bias voltages of 1/-8 V). A 0.01- mm2 hybrid diode has a series resistance of 200 Ω and a capacitance of 7 pF, leading to a cutoff frequency of 110 MHz. As a half-wave rectifier driving a parallel 1- MΩ resistive and 100-nF capacitive load, the dc rectified voltage drops at frequencies , with a -3 dB point at 70 MHz.
Keywords :
Schottky diodes; amorphous semiconductors; current density; rectifiers; silicon; Schottky diodes; amorphous silicon; capacitance 100 nF; capacitance 7 pF; frequency 110 MHz; frequency 70 MHz; half-wave rectifier; high frequency rectification; nanocrystalline silicon; on-to-off current ratio; resistance 1 Mohm; resistance 200 ohm; voltage 1 V; voltage 2 V; Cutoff frequency; Frequency conversion; P-i-n diodes; Power conversion; Resistance; Schottky diodes; Silicon; Schottky diode; amorphous silicon (a-Si); half-wave; high frequency; nanocrystalline silicon (nc-Si); power conversion efficiency; rectifier;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2306940
Filename :
6758370
Link To Document :
بازگشت