Title :
Status and trends in power semiconductor devices
Author :
Blackburn, David L.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A brief description of some developments that affect the application of power semiconductor devices is given. Developments in `chips´, packages, simulation, and new materials are included
Keywords :
bipolar integrated circuits; insulated gate field effect transistors; metal-insulator-semiconductor devices; packaging; power electronics; power integrated circuits; power transistors; semiconductor devices; chips; materials; packages; power semiconductor devices; simulation; Circuit simulation; Insulated gate bipolar transistors; NIST; Packaging; Power generation economics; Power semiconductor devices; Power system economics; Semiconductor materials; Silicon; Thyristors;
Conference_Titel :
Industrial Electronics, Control, and Instrumentation, 1993. Proceedings of the IECON '93., International Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-0891-3
DOI :
10.1109/IECON.1993.339117
