Field analysis (full-wave) of millimeter-wave HEMTs

Author

Ghiamy, M. ; Abdipour, A. ; Moeeni, R.

Author_Institution

Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2001

fDate

2001

Firstpage

121

Lastpage

126

Abstract

In this paper an efficient method for full-wave analysis of millimeter-wave HEMTs is presented. The effect of wave propagation on transistor´s structure is considered using finite difference time domain (FDTD) method (full-wave analysis). The active properties of transistor are studied using a small signal current density coupled to Maxwell´s equations. This method provides simulation time reduction and can be applied to the next generation of simulators for simultaneous electromagnetic-electronic modelling of mm-wave devices

Keywords

Maxwell equations; current density; finite difference time-domain analysis; high electron mobility transistors; millimetre wave field effect transistors; semiconductor device models; Maxwell´s equations; electromagnetic-electronic modelling; finite difference time domain method; full-wave analysis; millimeter-wave HEMTs; simulation time reduction; small signal current density; wave propagation; Current density; Electromagnetic propagation; Finite difference methods; HEMTs; MODFETs; Maxwell equations; Millimeter wave propagation; Millimeter wave technology; Millimeter wave transistors; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Electronics: Measurements, Identification, Application Conference, 2001. MEMIA 2001

Conference_Location

Novosibirsk

Print_ISBN

0-7803-6743-X

Type

conf

DOI

10.1109/MEMIA.2001.982335

Filename

982335