DocumentCode
2222057
Title
X-band amplifier on GaN qmic with output power of 20 W
Author
Guljaev, V.I. ; Glazunov, V.V. ; Zykova, G.S. ; Mjakichev, J.B.
Author_Institution
JSC Oktava, Novosibirsk, Russia
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
127
Lastpage
128
Abstract
In this paper the development results of GaN quasi-monolithic IC (QMIC) of preliminary and output X-band amplifiers and open-frame hybrid-integral amplifier module with output power of 20 W based on it are presented. The construction and characteristics of QMIC are shown.
Keywords
III-V semiconductors; amplifiers; gallium compounds; monolithic integrated circuits; QMIC; X-band amplifier; open-frame hybrid-integral amplifier module; power 20 W; quasimonolithic IC; Aluminum gallium nitride; Electronic mail; Gallium nitride; Microwave FET integrated circuits; Microwave integrated circuits; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6068865
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