• DocumentCode
    2222094
  • Title

    C-band amplifier on GaN QMIC with output power of 25 W

  • Author

    Guljaev, V.I. ; Glazunov, V.V.

  • Author_Institution
    JSC "Oktava", Novosibirsk, Russia
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    129
  • Lastpage
    130
  • Abstract
    In this paper the results of development of GaN quasi-monolithic IC (QMIC) of C-band power amplifier and a module of an open-frame hybrid-integral amplifier with output power of 25 W based on it are presented. The design of QMIC, the amplifier module and the experimental results are shown.
  • Keywords
    III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; C-band power amplifier; GaN; open-frame hybrid-integral amplifier; power 25 W; quasimonolithic IC; Aluminum gallium nitride; Gallium nitride; Logic gates; Microwave integrated circuits; Power amplifiers; Power generation; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6068866