DocumentCode
2222094
Title
C-band amplifier on GaN QMIC with output power of 25 W
Author
Guljaev, V.I. ; Glazunov, V.V.
Author_Institution
JSC "Oktava", Novosibirsk, Russia
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
129
Lastpage
130
Abstract
In this paper the results of development of GaN quasi-monolithic IC (QMIC) of C-band power amplifier and a module of an open-frame hybrid-integral amplifier with output power of 25 W based on it are presented. The design of QMIC, the amplifier module and the experimental results are shown.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; C-band power amplifier; GaN; open-frame hybrid-integral amplifier; power 25 W; quasimonolithic IC; Aluminum gallium nitride; Gallium nitride; Logic gates; Microwave integrated circuits; Power amplifiers; Power generation; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6068866
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