DocumentCode :
2222094
Title :
C-band amplifier on GaN QMIC with output power of 25 W
Author :
Guljaev, V.I. ; Glazunov, V.V.
Author_Institution :
JSC "Oktava", Novosibirsk, Russia
fYear :
2011
fDate :
12-16 Sept. 2011
Firstpage :
129
Lastpage :
130
Abstract :
In this paper the results of development of GaN quasi-monolithic IC (QMIC) of C-band power amplifier and a module of an open-frame hybrid-integral amplifier with output power of 25 W based on it are presented. The design of QMIC, the amplifier module and the experimental results are shown.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; C-band power amplifier; GaN; open-frame hybrid-integral amplifier; power 25 W; quasimonolithic IC; Aluminum gallium nitride; Gallium nitride; Logic gates; Microwave integrated circuits; Power amplifiers; Power generation; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
Type :
conf
Filename :
6068866
Link To Document :
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