DocumentCode :
2222142
Title :
Design features for polysilicon high pressure transducers
Author :
Gridchin, V.A. ; Grischenko, V.V. ; Lubimsky, V.M. ; Shaporin, A.V. ; Lee, J.H.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fYear :
2001
fDate :
2001
Firstpage :
147
Lastpage :
150
Abstract :
In this experimental work, polysilicon pressure transducers are designed with pressure-sensitive elements and applied for pressure over 5 MPa. To determine the magnitude of mechanical stress in the diaphragm, we defined gauge factors from longitudinal and transverse piezoresistors on console beam made from the same wafer as the diaphragm. Also, we modeled mechanical stress in the diaphragm by the finite element method (FEM) by taking into account not only the uniformly distributed load on the plate of diaphragm, but also the load on the lateral side of the diaphragm. The comparison of the calculated mechanical stress with the experimentally defined stress has shown a coincidence within 20% error bound
Keywords :
diaphragms; elemental semiconductors; finite element analysis; piezoelectric semiconductors; piezoresistive devices; pressure transducers; silicon; Si; console beam; diaphragm; finite element method; high pressure transducers; longitudinal piezoresistors; mechanical stress; polysilicon; pressure-sensitive elements; transverse piezoresistors; uniformly distributed load; Anisotropic magnetoresistance; Etching; Mechanical sensors; Oxidation; Piezoresistance; Piezoresistive devices; Resistors; Stress; Structural beams; Transducers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Electronics: Measurements, Identification, Application Conference, 2001. MEMIA 2001
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-6743-X
Type :
conf
DOI :
10.1109/MEMIA.2001.982339
Filename :
982339
Link To Document :
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