DocumentCode
2222198
Title
High-resistance thick silicon epitaxial layers
Author
Ivancheva, Weselka ; Rahnev, Pavlik ; Letskovska, Silviya ; Seymenliyski, Kamen ; Tzanev, Tzanko
Author_Institution
Departmen - Sliven, Tech. Univ., Sofia, Bulgaria
fYear
2001
fDate
2001
Firstpage
156
Lastpage
158
Abstract
The development and introduction of powerful high-voltage diodes and transistors, p-i-n diodes, photodiodes, avalanche diodes and other devices require silicon epitaxial layers with high resistance and large thickness, smooth surfaces and a considerable extent of crystallographic perfection, i.e. a minimal number of structural defects. CVD appears to be the most suitable technology for obtaining such layers
Keywords
power transistors; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; CVD; Si; avalanche diodes; crystallographic perfection; high-voltage diodes; high-voltage transistors; p-i-n diodes; photodiodes; semiconductor epitaxial layers; structural defects; Building materials; Conductivity; Epitaxial layers; Impurities; Inductors; Pollution; Power generation; Semiconductor epitaxial layers; Silicon; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Electronics: Measurements, Identification, Application Conference, 2001. MEMIA 2001
Conference_Location
Novosibirsk
Print_ISBN
0-7803-6743-X
Type
conf
DOI
10.1109/MEMIA.2001.982341
Filename
982341
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