Title :
The output circuit of inverse class F power amplifier with slot resonators in the microstrip line ground plane
Author :
Kryzhanovskiy, V.G. ; Rassokhina, Yu V. ; Colantonio, P.
Author_Institution :
Radiophys. Dept., Donetsk Nat. Univ., Donetsk, Ukraine
Abstract :
The modeling results of class F-1 power amplifier on GaN transistor NPTB00004 at operating frequency 1.6 GHz are presented. As a harmonics filter circuit the structure based of slot resonators in microstrip line ground plane was used. Modeling results had shown the drain efficiency and output power of the class F-1 power amplifier at operating frequency 59% and 6 W correspondingly.
Keywords :
III-VI semiconductors; UHF power amplifiers; UHF transistors; filters; gallium compounds; microstrip lines; power transistors; resonators; class F<;sup>;-1<;/sup>; power amplifier; drain efficiency; frequency 1.6 GHz; harmonics filter circuit; inverse class F power amplifier; microstrip line ground plane; output circuit; power 6 W; slot resonators; transistor NPTB00004; Educational institutions; Electronic mail; Gallium nitride; Integrated circuit modeling; Microstrip; Microstrip filters; Power amplifiers;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
