• DocumentCode
    2222275
  • Title

    Intermodulation distortions in GaAs and SiC class-E power amplifiers

  • Author

    Makarov, D.G. ; Kryzhanovskiy, V.G. ; Kistchinsky, A.A.

  • Author_Institution
    Donetsk Nat. Univ., Donetsk, Ukraine
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    Third-order intermodulation distortions (IMD) in two different cases of class-E power amplifiers (PA) using GaAs and SiC transistors are investigated.
  • Keywords
    III-V semiconductors; gallium arsenide; power amplifiers; silicon compounds; GaAs; SiC; class-E power amplifiers; third-order intermodulation distortions; transistors; Gallium arsenide; Microwave communication; Microwave transistors; Power amplifiers; Silicon carbide; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6068873
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2222275