Title :
Intermodulation distortions in GaAs and SiC class-E power amplifiers
Author :
Makarov, D.G. ; Kryzhanovskiy, V.G. ; Kistchinsky, A.A.
Author_Institution :
Donetsk Nat. Univ., Donetsk, Ukraine
Abstract :
Third-order intermodulation distortions (IMD) in two different cases of class-E power amplifiers (PA) using GaAs and SiC transistors are investigated.
Keywords :
III-V semiconductors; gallium arsenide; power amplifiers; silicon compounds; GaAs; SiC; class-E power amplifiers; third-order intermodulation distortions; transistors; Gallium arsenide; Microwave communication; Microwave transistors; Power amplifiers; Silicon carbide; Transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
