DocumentCode
2222316
Title
A Nyquist rate pixel level ADC for CMOS image sensors
Author
Yang, David X D ; Fowler, Boyd ; Gamal, Abbas El
Author_Institution
Inf. Syst. Lab., Stanford Univ., CA, USA
fYear
1998
fDate
11-14 May 1998
Firstpage
237
Lastpage
240
Abstract
A Nyquist rate Multi-Channel bit serial (MCBS) ADC using successive comparisons is presented. The ADC is suited to pixel level implementation in a CMOS image sensor. It comprises a 1-bit comparator/latch pair per 4 pixels and a DAC/controller shared by all pixels. A CMOS 320×240 sensor using the MCBS ADC is described. It achieves 8.9×8.9 μm pixel size at 25% fill factor in 0.35 μm CMOS technology. Measured INL/DNL for the ADC are 2.3/1.2 LSB at 8-bit. Gain/offset FPN due to ADC are 0.24%/0.2%
Keywords
CMOS image sensors; analogue-digital conversion; 0.35 micron; CMOS image sensors; DAC/controller; Nyquist rate ADC; comparator/latch pair; multi-channel bit serial ADC; pixel level implementation; successive comparisons; CMOS image sensors; CMOS process; CMOS technology; Circuits; Digital cameras; Image sensors; Information systems; Laboratories; Pixel; Sensor arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location
Santa Clara, CA
Print_ISBN
0-7803-4292-5
Type
conf
DOI
10.1109/CICC.1998.694971
Filename
694971
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