• DocumentCode
    2222316
  • Title

    A Nyquist rate pixel level ADC for CMOS image sensors

  • Author

    Yang, David X D ; Fowler, Boyd ; Gamal, Abbas El

  • Author_Institution
    Inf. Syst. Lab., Stanford Univ., CA, USA
  • fYear
    1998
  • fDate
    11-14 May 1998
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    A Nyquist rate Multi-Channel bit serial (MCBS) ADC using successive comparisons is presented. The ADC is suited to pixel level implementation in a CMOS image sensor. It comprises a 1-bit comparator/latch pair per 4 pixels and a DAC/controller shared by all pixels. A CMOS 320×240 sensor using the MCBS ADC is described. It achieves 8.9×8.9 μm pixel size at 25% fill factor in 0.35 μm CMOS technology. Measured INL/DNL for the ADC are 2.3/1.2 LSB at 8-bit. Gain/offset FPN due to ADC are 0.24%/0.2%
  • Keywords
    CMOS image sensors; analogue-digital conversion; 0.35 micron; CMOS image sensors; DAC/controller; Nyquist rate ADC; comparator/latch pair; multi-channel bit serial ADC; pixel level implementation; successive comparisons; CMOS image sensors; CMOS process; CMOS technology; Circuits; Digital cameras; Image sensors; Information systems; Laboratories; Pixel; Sensor arrays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-7803-4292-5
  • Type

    conf

  • DOI
    10.1109/CICC.1998.694971
  • Filename
    694971