Title :
High Temperature Growth of the Dilute Nitride GaAsN using a Nitrogen ECR Plasma Source
Author :
Usher, Brian ; Warminski, Tadeus ; Dieing, Thomas ; Prince, Kathryn
Author_Institution :
Dept. of Electron. Eng., La Trobe Univ., Bundoora, Vic.
Abstract :
The dilute nitride GaAsN has been grown by MBE using an ECR nitrogen plasma source. This has allowed growth at a substrate temperature of 600 C, which in combination with an ion trap, has produced higher quality as-grown material. Layer chemistry has been assessed by SIMS, XRD and optical quality measured using photoluminescence.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-temperature electronics; molecular beam epitaxial growth; photoluminescence; plasma radiofrequency heating; plasma sources; semiconductor growth; 600 C; GaAsN; MBE; SIMS; XRD; dilute nitride; high temperature growth; layer chemistry; nitrogen ECR plasma source; optical quality; photoluminescence; Molecular beam epitaxial growth; Nitrogen; Particle beam optics; Photoluminescence; Plasma measurements; Plasma sources; Plasma temperature; Radio frequency; Voltage; X-ray scattering;
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0452-5
Electronic_ISBN :
1-4244-0452-5
DOI :
10.1109/ICONN.2006.340621
