• DocumentCode
    2222403
  • Title

    ALGaN/GaN phemt transistors on SiC substrate

  • Author

    Antonova, N.E. ; Zemliakov, V.E. ; Krutov, A.V. ; Rebrov, A.S.

  • Author_Institution
    FSUE RPC “Istok”, Fryazino, Russia
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    155
  • Lastpage
    156
  • Abstract
    The article concerns the development and practical realization results of AlGaN/GaN transistors on SiC substrate. The measured parameters are presented.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; AlGaN-GaN; PHEMT transistors; SiC; substrate; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; PHEMTs; Robustness; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6068878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2222403