DocumentCode
2222454
Title
X-band GaAs pHEMT MMIC low-noise amplifier
Author
Arykov, Vadim S. ; Barov, A.A. ; Velikovskiy, L.E. ; Kondratenko, A.V.
Author_Institution
MICRAN Co., Tomsk, Russia
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
159
Lastpage
160
Abstract
This report presents results of design and manufacturing of X-band GaAs pHEMT low-noise amplifier. Operating frequency band is 8-12 GHz, gain is 30 dB, noise factor is 1.5 dB, P1dB output power is 10 dBm, unipolar supply voltage is +5 V, consumption current is 100 mA, and chip dimensions are 2.5×1.5×0.1 mm.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium arsenide; integrated circuit noise; low noise amplifiers; microwave power transistors; power HEMT; GaAs; X-band pHEMT MMIC low-noise amplifier; current 100 mA; frequency 12 GHz to 8 GHz; gain 30 dB; noise factor; operating frequency band; unipolar supply voltage; voltage 5 V; Gallium arsenide; Lithography; Logic gates; Low-noise amplifiers; MMICs; Microwave circuits; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6068880
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