Co-Doped TiO/sub 2/ Rutile Thin Films Deposited by MOCVD Method

Author

Saragih, H. ; Arifin, P. ; Barmawi, M.

Author_Institution

Dept. of Phys., Bandung Inst. of Technol.

fYear

2006

fDate

3-7 July 2006

Abstract

Co-doped TiO₂ thin films were grown on Si(100) substrates by MOCVD method using titanium (IV) isopropoxide [Ti(OCH(CH3)2)4] and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) cobalt (III), Co(TMHD)3 precursors. The growth parameters, crystal structure, ferromagnetic and electrical transport properties of thin films were investigated. Ferromagnetic behaviors of films were observed at room temperature. Magnetic and structural properties strongly depend on the Co concentration and the growth temperature. Epitaxial thin films with highest magnetic saturation were found on the films grown at temperature of 450 C. Resistivity as a function of temperature measurement shows that the films have semiconducting properties.

Keywords

MOCVD; cobalt; ferromagnetic materials; magnetic thin films; silicon; titanium compounds; Co; MOCVD; Si(100); TiO₂; crystal structure; electrical transport properties; epitaxial thin films; ferromagnetic properties; ferromagnetic thin films; magnetic properties; metalorganic chemical vapour deposition; MOCVD; Magnetic films; Magnetic properties; Magnetic semiconductors; Saturation magnetization; Semiconductor films; Sputtering; Substrates; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

1-4244-0452-5

Electronic_ISBN

1-4244-0452-5

Type

conf

DOI

10.1109/ICONN.2006.340628

Filename

4143408