Title :
Co-Doped TiO/sub 2/ Rutile Thin Films Deposited by MOCVD Method
Author :
Saragih, H. ; Arifin, P. ; Barmawi, M.
Author_Institution :
Dept. of Phys., Bandung Inst. of Technol.
Abstract :
Co-doped TiO2 thin films were grown on Si(100) substrates by MOCVD method using titanium (IV) isopropoxide [Ti(OCH(CH3)2)4] and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) cobalt (III), Co(TMHD)3 precursors. The growth parameters, crystal structure, ferromagnetic and electrical transport properties of thin films were investigated. Ferromagnetic behaviors of films were observed at room temperature. Magnetic and structural properties strongly depend on the Co concentration and the growth temperature. Epitaxial thin films with highest magnetic saturation were found on the films grown at temperature of 450 C. Resistivity as a function of temperature measurement shows that the films have semiconducting properties.
Keywords :
MOCVD; cobalt; ferromagnetic materials; magnetic thin films; silicon; titanium compounds; Co; MOCVD; Si(100); TiO2; crystal structure; electrical transport properties; epitaxial thin films; ferromagnetic properties; ferromagnetic thin films; magnetic properties; metalorganic chemical vapour deposition; MOCVD; Magnetic films; Magnetic properties; Magnetic semiconductors; Saturation magnetization; Semiconductor films; Sputtering; Substrates; Temperature; Transistors;
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0452-5
Electronic_ISBN :
1-4244-0452-5
DOI :
10.1109/ICONN.2006.340628
